 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UNISONIC TECHNOLOGIES CO., LTD 2SD2470 STROBO AND DC/DC CONVERTERS FEATURES * Low saturation voltage V= 0.25V(typ) at IC/IB= 3A/0.1A * Collector current of 5A is possible NPN SILICON TRANSISTOR 1 TO-92SP *Pb-free plating product number: 2SD2470L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD2470-x-T9S-K 2SD2470L-x-T92-K Package TO-92SP Pin Assignment 1 2 3 E C B Packing Bulk 2SD2470L-x-T9S-K (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) K: Bulk (2) T9S: TO-92SP (3) refer to Classification of hFE (4) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R216-003,D 2SD2470 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25 ) SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 10 V Collector Current (DC) IC 5 A Collector Current (PULSE)* ICP 8 A Collector Power Dissipation PC 0.4 W Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. * Single Pulse =10ms PARAMETER ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) fT Cob TEST CONDITIONS IC= 50A IC= 1mA IE=50A VCB=10V, IE=0 VEB= 8V, IC=0 VCE= 2V, IC= 2A IC/IB=3A /0.1A VCE=6V, IE=0.05A, f=100MHz VCB= 10V, IE= 0 A, f=1MHz MIN 15 10 10 TYP MAX UNIT V V V A A V MHz pF 270 0.25 170 30 0.1 0.5 820 0.5 CLASSIFICATION OF hFE RANK RANGE S 270~560 E 450~820 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R216-003,D 2SD2470 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS VCE(SAT) vs. IC 1000 IC/IB=30 100 VCE(SAT) (mV) 10 1 10m 100m IC (A) 1 10 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R216-003,D |
Price & Availability of 2SD2470-S-T9S-K
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |